2SC3181 - INCHANGE

2SC3181 NPN Transistor

·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1264 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25.

Features

O Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A 2.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 4A; VCE= 5V 35 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 190 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 30 MHz  hFE-1 Classifications R O 55-110 80-160 Notice： ISC reserves the righ.