·With TO-3 package ·High breakdown voltage : VCBO=900V(Min) ·Fast switching speed. ·Wide area of safe operation www.DataSheet4U.com APPLICATIONS 2SC3156 ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC I.
kdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=A IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=800V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IE=0 ; VCB=10V, f=1MHz IC=0.4A ; VCE=10V 10 8 MIN 800 900 7 2SC3156 SYMBOL V(BR)CEO V(BR)CBO www.DataSheet4U.com TYP. MAX UNIT V V V V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT 2.0 1.5 10 10 V V µA µA.
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3150 |
Sanyo Semicon Device |
NPN Transistor | |
2 | 2SC3150 |
INCHANGE |
NPN Transistor | |
3 | 2SC3150 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC3150A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC3151 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SC3151 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC3151 |
INCHANGE |
NPN Transistor | |
8 | 2SC3152 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
9 | 2SC3152 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC3152 |
INCHANGE |
NPN Transistor | |
11 | 2SC3153 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
12 | 2SC3153 |
SavantIC |
SILICON POWER TRANSISTOR |