2SC3122 - Kexin

2SC3122 Silicon NPN Epitaxial Transistor

SMD Type Silicon NPN Epitaxial 2SC3122 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward AGC Characteristics 0.55 High Gain: Gpe=24dB(Typ.)(f=200MHz) +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Abs.

Features

0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55 to +125 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com SMD Type 2SC3122 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-em.