2SC2873-G - Comchip

2SC2873-G Transistor

General Purpose Transistor 2SC2873-G Series (NPN) RoHS Device Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage. Circuit Diagram 1 : BASE 2 : COLLECTOR 3 : EMITTER 1 Base Collector 2 3 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage V.

Features

- Small flat package - High speed switching time. - Low collector-emitter saturation voltage. Circuit Diagram 1 : BASE 2 : COLLECTOR 3 : EMITTER 1 Base Collector 2 3 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO 50 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 2 A Collector power dissipation Thermal resistance from junction to ambient PD RθJA 500 mW 250 °C/W Junction temperature Storage temperature TJ 150 °C Tstg -55~+150 °C SOT-89-3L 0.181(4.60) 0.17.