2SC2710 - Toshiba Semiconductor

2SC2710 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE (1) = 100~320 · Complementary to 2SA1150 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissip.

Features

IB = 20 mA VCE = 1 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 30 ¾ ¾ V 100 ¾ 320 35 ¾ ¾ ¾ ¾ 0.5 V 0.5 ¾ 0.8 V ¾ 120 ¾ MHz ¾ 13 ¾ pF 1 2003-03-25 2SC2710 2 2003-03-25 2SC2710 RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensi.