Transistors 2SC2647 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm ■ Features • Optimum for RF amplification, oscillation, mixing, and IF of (0.4) 6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0) (1.0) 4.5±0.1 3.5±0.1 FM/AM radios R 0.9 • M type package allowing easy automatic and manual insertion R 0.7 as well as stand-alone fixi.
• Optimum for RF amplification, oscillation, mixing, and IF of
(0.4)
6.9±0.1 (1.5)
(1.5)
2.5±0.1 (1.0)
(1.0)
4.5±0.1
3.5±0.1
FM/AM radios
R 0.9
• M type package allowing easy automatic and manual insertion
R 0.7
as well as stand-alone fixing to the printed circuit board
4.1±0.2
/
■ Absolute Maximum Ratings Ta = 25°C
1.0±0.1
2.4±0.2
(0.85)
0.45±0.05
2.0±0.2
0.55±0.1
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
1.25±0.05
V
c e. d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2640 |
Toshiba Semiconductor |
TRANSISTOR | |
2 | 2SC2640 |
HGSemi |
Silicon NPN POWER TRANSISTOR | |
3 | 2SC2641 |
Toshiba Semiconductor |
TRANSISTOR | |
4 | 2SC2642 |
Toshiba Semiconductor |
TRANSISTOR | |
5 | 2SC2642 |
HGSemi |
HG RF POWER TRANSISTOR | |
6 | 2SC2643 |
Toshiba Semiconductor |
TRANSISTOR | |
7 | 2SC2644 |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor | |
8 | 2SC2603 |
Micro Electronics |
NPN SILICON TRANSISTOR | |
9 | 2SC2608 |
INCHANGE |
NPN Transistor | |
10 | 2SC2608 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC2610 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor | |
12 | 2SC2610 |
Renesas |
Silicon NPN Triple Diffused Transistor |