2SC2620 - Hitachi Semiconductor

2SC2620 Silicon NPN Transistor

2SC2620 Silicon NPN Epitaxial Planar Application VHF amplifier, Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2620 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol .

Features

ltage Gain bandwidth product Collector output capacitance Note: Grade Mark hFE B QB 60 to 120 C QC 100 to 200 V(BR)EBO I CBO I EBO hFE
* 60 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = 20 mA, IB = 4 mA VCE = 6 mA, IC = 1 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SC2620 is grouped by h FE as follows. See characteristic curves of 2SC535. 2 2SC2620 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 100 50 0 50 100 150 Ambient Temperature Ta (°C) 3 Unit: mm 0.65 0.10 3
  – 0.4 +
  – 0.05 0.16
  – 0.06 + 0.10 1.5 ± 0.15 + 0.2
  – 0.6 0
  – 0.1 .