·With MT-200 package ·Excellent safe operating area ·Fast switching speed APPLICATIONS ·Suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ABSOLUTE MAXI.
Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; RBE=9 IC=50µA; IE=0 IE=50µA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=120V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCB=10V,f=1MHz IE=0; VCB=10V;f=1MHz 60 40 MIN 120 120 5 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SC2588 TYP. MAX UNIT V V V 1.8 1.7 50 50 200 V V µA µA 60 170 MHz.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2580 |
INCHANGE |
NPN Transistor | |
2 | 2SC2580 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC2581 |
INCHANGE |
NPN Transistor | |
4 | 2SC2581 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC2582 |
INCHANGE |
NPN Transistor | |
6 | 2SC2582 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC2585 |
Advanced Semiconductor |
NPN SILICON RF TRANSISTOR | |
8 | 2SC2500 |
Toshiba Semiconductor |
TRANSISTOR | |
9 | 2SC2500 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
10 | 2SC2500 |
JCET |
NPN Transistor | |
11 | 2SC2501 |
INCHANGE |
NPN Transistor | |
12 | 2SC2502 |
INCHANGE |
NPN Transistor |