1) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 1 2SC2563 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. features: . Complementary to 2SA1093. . Recommended for 50W audio amplifier output stage. . High transition frequency : fT=90MHz (Typ. Unit in mm 159MAX ^3.2±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector.
. Complementary to 2SA1093. . Recommended for 50W audio amplifier output stage. . High transition frequency : fT=90MHz (Typ. Unit in mm 159MAX ^3.2±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation (Tc=25°C) Junction Temperature ?C Storage Temperature Range stg RATING 120 120 UNIT 0.8 80 150 -55-150 °C 545-0.2 c3ci +I 5.45±0.2 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC TOSHIBA Weight : 4.6g ELECTRICAL CHARACTER.
·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications .
·High power dissipation ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2561 |
Panasonic Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
2 | 2SC2562 |
INCHANGE |
NPN Transistor | |
3 | 2SC2562 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC2562 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC2564 |
INCHANGE |
NPN Transistor | |
6 | 2SC2564 |
Toshiba |
Silicon NPN Transistor | |
7 | 2SC2564 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC2565 |
INCHANGE |
NPN Transistor | |
9 | 2SC2565 |
Toshiba |
Silicon NPN Transistor | |
10 | 2SC2565 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC2500 |
Toshiba Semiconductor |
TRANSISTOR | |
12 | 2SC2500 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |