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: I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES . High Breakdown Voltage : VCEO=50V, VEB0=8V • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA • Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2f.
. High Breakdown Voltage : VCEO=50V, VEB0=8V
• High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA
• Complementary to 2SA1090.
Iln it in mm
05.8MAX. 04.95MAX.
25
00.45
[|[
j2fe.54
MAXIMUM RATINGS
fTa=25°r.^
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Base Current Collector Power Dissipation Junction Temperature
Storage Temperature Range
SYMBOL v CBO vCEO v EBO XC
IB PC T
J
T stg
RATING 60 50
8
200
50 300 175 -65VL75
UNIT V
V
1. EMITTER
V
2. BASE
3. COLLECTOR (CASE)
mA
TO 18
mA
TC — 7, TB 8C
mW
°C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2551 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2551 |
SeCoS |
NPN Transistor |
|
| 3 | 2SC2551 |
LGE |
NPN Transistor |
|
| 4 | 2SC2552 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2552 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC2552 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC2553 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC2553 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC2553 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 10 | 2SC2555 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 11 | 2SC2555 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 12 | 2SC2556 |
INCHANGE |
NPN Transistor |
|