·With TO-220C package ·Low collector saturation voltage ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Colle.
METER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=100µA ; IE=0 IE=100µA ; IC=0 IC=4A; IB=0.4A IC=4A; IB=0.4A VCB=150V ;IE=0 VEB=7V; IC=0 IC=4 A ; VCE=1V 30 MIN 80 150 7 2SC2438 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V 0.5 1.2 100 100 V V µA µA Switching times ton ts tf Turn-on time Storage time Fall time IC=4A; IB1=0.4A IB2=-0.4A.
·Low Collector Saturation Voltage- :VCE(sat)= 0.5(V)(Max)@ IC= 4A ·High Switching Speed ·High Reliability ·Minimum Lot-t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2431 |
Fujitsu |
Silicon High Speed Power Transistor | |
2 | 2SC2432 |
Fujitsu |
Silicon High Speed Power Transistor | |
3 | 2sc2433 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
4 | 2SC2433 |
Fujitsu |
Silicon High Speed Power Transistor | |
5 | 2SC2434 |
Fujitsu |
Silicon High Speed Power Transistor | |
6 | 2SC2435 |
Fujitsu |
Silicon Ring Emitter Darlington Transistors | |
7 | 2SC2437 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC2437 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
9 | 2SC2404 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | 2SC2404 |
Kexin |
Silicon PNP Transistor | |
11 | 2SC2404 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SC2405 |
Panasonic Semiconductor |
Silicon NPN Transistor |