·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A, IB= 0.6A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching in Inductive circuit , they are particularl.
tance, Junction to Case MAX UNIT 3.125 ℃/W 2SC2335 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat) VBE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 50mA, IB=0 IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A ICBO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 400V ; IE=0 VCE= 400V; VBE(off)= -1.5V VCE= 400V; VBE(off)= -1.5.
of circuits, software and other related information in this document are provided for illustrative purposes in semicond.
TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features ,。 low collector saturation voltage, .
·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2330 |
ETC |
NPN SILICON EPITAXIAL TRANSISTOR | |
2 | 2SC2330 |
HGSemi |
HG RF POWER TRANSISTOR | |
3 | 2SC2331 |
NEC |
Silicon Power Transistor | |
4 | 2SC2331 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC2331 |
INCHANGE |
NPN Transistor | |
6 | 2SC2333 |
NEC |
PNP Transistor | |
7 | 2SC2333 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC2333 |
INCHANGE |
NPN Transistor | |
9 | 2SC2334 |
INCHANGE |
NPN Transistor | |
10 | 2SC2334 |
NEC |
NPN Transistor | |
11 | 2SC2334 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC2334 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |