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2SC2335 - INCHANGE

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2SC2335 NPN Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 3A, IB= 0.6A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed switching in Inductive circuit , they are particularl.

Features

tance, Junction to Case MAX UNIT 3.125 ℃/W 2SC2335 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat) VBE(sat) Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 50mA, IB=0 IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A ICBO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 400V ; IE=0 VCE= 400V; VBE(off)= -1.5V VCE= 400V; VBE(off)= -1.5.

The same part from a different manufacturer

Datasheet 2SC2335 - NEC 2SC2335

of circuits, software and other related information in this document are provided for illustrative purposes in semicond.

Datasheet 2SC2335 - BLUE ROCKET ELECTRONICS 2SC2335

TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package.  / Features ,。 low collector saturation voltage, .

Datasheet 2SC2335 - SavantIC 2SC2335

·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VC.

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