SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) COLOR TV CHROMA OUTPUT APPLICATIONS. FEaTURES: . High Voltage : VCE0=300V . Small Collector Output Capacitance : C ob=4.0pF (Max. MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction T.
. High Voltage : VCE0=300V . Small Collector Output Capacitance : C ob=4.0pF (Max. MAXIMUM RATINGS (Ta=25°C; CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vCBO VCEO VEBO ic IB Tstg RATING 300 300 UNIT 50 mA 20 mA 1.5 150 -55-150 °C Unit in mm 9. 9 MAX. 03.2x0.2 XcS ^ cr s 3° 3° X < 00 " 1.2 J 1 1 K 1j.^5j ^k l ) S 0.76 ^ 2.54 2.54 0.5 3° l^L^ C> s CO 1 b ft , 4- -ju 3° 3° 1. BASE 2. COLLECTOR 3. EMIT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2060 |
LZG |
SILICON NPN TRANSISTOR | |
2 | 2SC2060 |
Changjiang |
NPN Transistor | |
3 | 2SC2060 |
JCET |
NPN Transistor | |
4 | 2SC2060 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | 2SC2061 |
Rohm |
Medium Power Amp / NPN Silicon Transistor | |
6 | 2SC2062S |
Rohm |
High-gain Amplifier Transistor | |
7 | 2SC2063 |
Rohm |
RF Amplifier Epitaxial Planar NPN Silicon Transistors | |
8 | 2SC2000 |
NEC |
NPN SILICON TRANSISTOR | |
9 | 2SC2001 |
NEC |
NPN SILICON TRANSISTOR | |
10 | 2SC2001 |
MCC |
NPN Transistor | |
11 | 2SC2001 |
SeCoS |
NPN Plastic Encapsulated Transistor | |
12 | 2SC2001 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |