2SC1848 - INCHANGE

2SC1848 NPN Transistor

·Silicon NPN epitaxial planar ·High voltage ·Complement to Type 2SA887 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collect.

Features

A; IB= 0.2A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB=5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 1.0A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V MIN TYP. MAX UNIT 1.0 V 1.5 V 1.0 μA 10 μA 30 50 220 150 MHz  hFE-2 Classifications P Q R 50-100 80-160 120-220 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. I.