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·With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1756 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC.
n frequency Collector output capacitance CONDITIONS IC=1mA ;IB=0 IC=50mA ;IB=5mA VCB=200V ;IE=0 VEB=5V; IC=0 IC=10mA ; VCE=10V IC=10mA ; VCE=30V f=1MHz;VCB=50V 40 50 MIN 300 2SC1756 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 2.0 0.1 0.1 200 V µA µA MHz 5.3 pF hFE classifications C 40-80 D 60-120 E 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1756 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN.
2SC1756 - INCHANGE
·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1755 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC1755 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1755 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC1706 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC1707 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC1722 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC1722 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC1723 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1723 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1728 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 11 | 2SC1728 |
Sony |
Transistor |
|
| 12 | 2SC1729 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|