2SC1733 - Renesas

2SC1733 NPN SILICON DUAL TRANSISTOR

t The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two c transistor chips equivalent to the 2SC1275 are housed in a package the same size as TO-18. du FEATURES High gain bandwidth product: fT = 2 GHz TYP. o Compact package, the same size as TO-18 PACKAGE DIMENSIONS (in millimeter.

Features

High gain bandwidth product: fT = 2 GHz TYP. o Compact package, the same size as TO-18 PACKAGE DIMENSIONS (in millimeters) φ 5.84 MAX. φ 4.95 MAX. 12.5 MIN. 5.33 MAX. 1.0 0.25 r ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) P PARAMETER Collector to Base Voltage d Collector to Emitter Voltage e Emitter to Base Voltage Collector Current u Collector Dissipation Total Power Dissipation in Junction Temperature t Storage Temperature SYMBOL RATINGS UNIT VCBO 30 V VCEO 14 V VEBO 3.0 V IC 50 mA PC 200 mW/unit PT 300 mW Tj 200 ˚C Tstg
  –65 to +200 ˚C n ELECTRICAL CHARACTERISTICS (TA .