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·Silicon NPN planar type ·High breakdown voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 65 V VCEO Collecto.
E(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 30V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V hFE-2 DC Current Gain IC= 1.5A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product IC= 100mA; VCE= 5V MIN TYP. MAX UNIT 65 V 1.0 V 10 μA 1.0 μA 15 10 30 45 pF 100 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presente.
2SC1678 - SavantIC
·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN 1.
2SC1678 - Toshiba
SILICON NPN EPITAXIAL PLANAR TYPE 27 MHz POWER AMPLIFIER APPLICATIONS. FEATURES • Recommended for Output Stage Applicat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1672 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC1672 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1674 |
NEC |
NPN SILICON TRANSISTOR |
|
| 4 | 2SC1674 |
Dc Components |
NPN Transistor |
|
| 5 | 2SC1674 |
SeCoS |
NPN Transistor |
|
| 6 | 2SC1674 |
Tiger Electronic |
Transistors |
|
| 7 | 2SC1674 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC1674 |
JCET |
NPN Transistor |
|
| 9 | 2SC1674 |
SEMTECH |
NPN Silicon Transistor |
|
| 10 | 2SC1674 |
USHA |
Transistors |
|
| 11 | 2SC1675 |
SeCoS |
NPN Transistor |
|
| 12 | 2SC1675 |
USHA |
Transistors |
|