2SC1627 - Toshiba Semiconductor

2SC1627 TRANSISTOR

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Voltage Amplifier Applications · · Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector.

Features

A, IB = 0 VCE = 2 V, IC = 50 mA VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Weight: 0.21 g (typ.) Min ¾ ¾ 80 70 40 ¾ 0.55 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 100 10 Max 0.1 0.1 ¾ 240 ¾ 0.5 0.8 ¾ ¾ Unit mA mA V V V MHz pF Note: hFE (1) classification O: 70~140, Y: 120~240 1 2003-03-24 2SC1627 2 2003-03-24 2SC1627 RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to .