·High Collector-base breakdown voltage:1500V ·Low saturation voltage@5A ·Large area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the horizontal output stage in power-transformer-less television receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB.
lector-Base Breakdown Voltage IC= 10mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 10mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 5A ; IB= 1.2A ICBX Collector Cutoff Current VCB= 1500V; VEB= 1.5V MIN TYP. MAX UNIT 500 V 6 V 10 V 2 V 1 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in gen.
·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1413 |
Hitachi |
NPN Transistor | |
2 | 2SC1413 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC1417 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
4 | 2SC1417 |
IZG |
SILICON NPN TRANSISTOR | |
5 | 2SC1418 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC1418 |
INCHANGE |
NPN Transistor | |
7 | 2SC1419 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC1419 |
INCHANGE |
NPN Transistor | |
9 | 2SC1400 |
ETC |
NPN Transistor | |
10 | 2SC1402 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC1402 |
INCHANGE |
NPN Transistor | |
12 | 2SC1403 |
SavantIC |
SILICON POWER TRANSISTOR |