2SC1380 - Toshiba

2SC1380 SILICON NPN TRANSISTOR

: 2SC1380 2SC1380A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW NOISE AUDIO AMPLIFIER APPLICATIONS. (2SC1380A) Unit in mm 5.8 MAX 04.95 MAX. FEATURES • High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700 • Low Noise Figure : NF=2dB(Max. ) (2SC1380A) at Rg =10kn, f=100H.

Features

• High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700
• Low Noise Figure : NF=2dB(Max. ) (2SC1380A) at Rg =10kn, f=100Hz MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO V CEO V EBO lC h PC T J T stg RATING 55 50 5 100 20 200 150 -55M.50 UNIT V V V mA mA mW °C °C 1. EMITTER 2. BASE 3. COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO-18 TC-7, TB-8C 2-5A1B Weight : 0.31g ELECTRICAL CHARACTERISTICS .