2SC1308 - INCHANGE

2SC1308 NPN Transistor

·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For TV horizontal deflection output application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-E.

Features

ctor-Emitter Saturation Voltage IC=6A; IB= 1.2 A VBE(sat) Base-Emitter Saturation Voltage IC=6A; IB= 1.2 A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE-1 DC Current Gain IC=1A; VCE= 5V hFE-2 DC Current Gain IC=4A; VCE= 5V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 MIN TYP. MAX UNIT 5 V 1.5 V 400 V 5 V 8 3 10 μA 10 μA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor.