·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-202) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER 2SC1226 VCBO Collector-base voltage 2SC1226A 2SC1226 VCEO Collector-emitter voltage 2SC1226.
se-emitter saturation voltage 2SC1226 V(BR)CBO Collector-base breakdown voltage 2SC1226A 2SC1226 V(BR)CEO Collector-emitter breakdown voltage 2SC1226A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=20V; IE=0 VCE=12V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0; VCB=5V;f=1MHz IE=0.5A ; VCB=5V IC=10mA; IB=0 IC=1mA;IE=0 CONDITIONS IC=2A ;IB=0.2 A IC=2A ;IB=0.2 A 2SC1226 2SC1226A MIN TYP. 0.4 MAX 1.0 1.5 UNIT V V 40 V 50 32 V 40 1 100 100 50 50 150 220 pF MHz µA µA µA u hFE classifi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1226 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type Transistor | |
2 | 2SC1226 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC1222 |
ETC |
Silicon NPN Transistor | |
4 | 2SC1227 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC1227 |
INCHANGE |
NPN Transistor | |
6 | 2SC1200 |
Toshiba |
TRANSISTOR | |
7 | 2SC1212 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SC1212 |
INCHANGE |
NPN Transistor | |
9 | 2SC1212 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC1212A |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SC1212A |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SC1212A |
INCHANGE |
NPN Transistor |