2SC109A - Toshiba

2SC109A Silicon NPN Epitaxial Type Transistor

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC1 09A, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm ^9.39 MAX I FEATURES . High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max..

Features

. High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC108A 2SC109A v CBO Collector- 2SC108A Emitter Voltage 2SC109A vCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 90 70 70 50 5 800 100 800 175 -65^175 UNIT V V V mA mA mW °.