·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=? ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-b.
0 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=2V 10 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE 2SC1027 Fig.2 outline dimensions (unindicated tolerance.
·With TO-3 package ·High power dissipation ·Low collector saturation voltag ·Minimum Lot-to-Lot variations for robust de.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1024 |
INCHANGE |
NPN Transistor | |
2 | 2SC1000 |
Toshiba |
Silicon NPN Transistor | |
3 | 2SC1000 |
ETC |
Silicon NPN Transistor | |
4 | 2SC1001 |
Toshiba |
SILICON NPN TRANSISTOR | |
5 | 2SC1002 |
SavantIC |
Silicon NPN Power Transistors | |
6 | 2SC1004 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC1004 |
INCHANGE |
NPN Transistor | |
8 | 2SC1008 |
INCHANGE |
NPN Transistor | |
9 | 2SC1008 |
TRANSYS Electronics Limited |
Transistors | |
10 | 2SC1008 |
Weitron |
NPN Transistor | |
11 | 2SC1008 |
SeCoS |
NPN Transistor | |
12 | 2SC1008 |
TGS |
Transistors |