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Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat .
q q q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
–60
–80
–60
–80
–5
–8
–4 40 2 150
–55 to +150 Unit V
16.7±0.3
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5
–0.1
+0.2
2.54±0.25 5.08±0.5 1 2
emitter voltage 2SB950A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Ju.
2SB950 - Panasonic Semiconductor
Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) www.DataSheet4U.net Silicon PNP epitaxial planar type darlingto.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB950A |
Panasonic Semiconductor |
Power Transistors |
|
| 2 | 2SB950A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB951 |
Panasonic Semiconductor |
PNP Transistor |
|
| 4 | 2SB951 |
Panasonic Semiconductor |
Power Transistors |
|
| 5 | 2SB951A |
Panasonic Semiconductor |
PNP Transistor |
|
| 6 | 2SB951A |
Panasonic Semiconductor |
Power Transistors |
|
| 7 | 2SB952 |
Panasonic Semiconductor |
PNP Transistor |
|
| 8 | 2SB952 |
Panasonic Semiconductor |
Power Transistors |
|
| 9 | 2SB952A |
Panasonic Semiconductor |
PNP Transistor |
|
| 10 | 2SB952A |
Panasonic Semiconductor |
Power Transistors |
|
| 11 | 2SB953 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB953 |
Panasonic Semiconductor |
Power Transistors |
|