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·With TO-220C package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SB925 VCBO Collector-base voltage 2SB925A 2SB925 VCEO Collector-emitter voltage 2SB925A VEBO IC I.
ONS SYMBOL 2SB925 2SB925A MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.6 -1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB925 2SB925A ICBO Collector cut-off current -50 VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 45 60 140 150 260 -50 µA IEBO hFE-1 hFE-2 Cob fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency µA pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A ;.
2SB925 - Inchange Semiconductor
·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -5A ·High Speed Switching.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB920 |
Sanyo Semicon Device |
PNP Transistor |
|
| 2 | 2SB920 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | 2SB920L |
Sanyo Semicon Device |
PNP Transistor |
|
| 4 | 2SB921 |
Sanyo Semicon Device |
PNP Transistor |
|
| 5 | 2SB921 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB921 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | 2SB921L |
Sanyo Semicon Device |
PNP Transistor |
|
| 8 | 2SB922 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB922 |
Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SB922 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 11 | 2SB922L |
Sanyo Semicon Device |
PNP Transistor |
|
| 12 | 2SB923 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|