2SB903 - Inchange Semiconductor

2SB903 Silicon PNP Power Transistor

·High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD1212 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters, and other general large-current switching applications. ABSOLUTE MAXIMU.

Features

CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -6A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V  hFE-1 Classifications Q R S 70-140 100-200 140-280 2SB903 MIN TYP. MAX UNIT -30 V -60 V.