2SB738 - Hitachi Semiconductor

2SB738 Silicon PNP Epitaxial Transistor

2SB738, 2SB739 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD787 and 2SD788 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB738, 2SB739 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissip.

Features

V V µA I C =
  –10 µA, IE = 0 I C =
  –1 mA, RBE = ∞ I E =
  –10 µA, IC = 0 VCB =
  –16 V, IE = 0 VEB =
  –6 V, IC = 0 VCE =
  –2 V, IC =
  –0.1 A I C =
  –1 A, IB =
  –0.1 A Typ — — — — — — — 150 50
  –20
  –16
  –6 — — 100 — — —
  –0.2 — 320 100
  –0.2 µA 320
  –0.3 V — — VCE(sat) fT
  –0.3 — — — — — MHz VCE =
  –2 V, IC =
  –10 mA pF VCB =
  –10 V, IE = 0, f = 1 MHz Collector output capacitance Cob Note: B 100 to 200 1. The 2SB738 and 2SB739 are grouped by h FE as follows. C 160 to 320 2 2SB738, 2SB739 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (mA)
  –100
  –0 Typica.