2SB1624 - INCHANGE

2SB1624 PNP Transistor

·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2493 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

Features

ONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -5mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 ICBO Collector Cutoff Current VCB= -110V; IE= 0 hFE DC Current Gain IC= -5A; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -12V  hFEClassifications O P Y 5000-12000 6500-20000 15000-30000 2SB1624 MIN TYP. MAX UNIT -110 V -2.5 V -3.0 V -100 μA -100 μA 5000 30000 100 MHz Notice： ISC reserves the rights to make ch.