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SMD Type Power Transistor 2SB1427 Transistors Features Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junc.
Low saturation voltage, typically VCE(sat) =-0.5V at IC/IB =-1A/-50mA. Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature
* Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP
* PC Tj Tstg Rating -20 -20 -6 -2 -3 0.5 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base break.
2SB1427 - Rohm
2SB1427 Middle Power Transistor (-20V, -2A) Parameter VCEO IC Value -20V -2A lFeatures 1)Low saturation voltage, VCE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1420 |
Sanken electric |
Silicon PNP Transistor |
|
| 2 | 2SB1420 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1421 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1424 |
Rohm |
PNP Transistor |
|
| 5 | 2SB1424 |
GME |
Transistor |
|
| 6 | 2SB1424 |
HOTTECH |
PNP Transistor |
|
| 7 | 2SB1424 |
Power Silicon |
PNP Transistor |
|
| 8 | 2SB1424 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SB1424 |
Weitron Technology |
Epitaxial Planar PNP Transistors |
|
| 10 | 2SB1424 |
TRANSYS |
Plastic-Encapsulate Transistors |
|
| 11 | 2SB1424 |
Kexin |
Transistor |
|
| 12 | 2SB1424 |
SeCoS |
PNP Silicon Medium Power Transistor |
|