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SMD Type PNP Transistors 2SB1386-HF Transistors Features Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta .
Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor
● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature
* Single pulse, Pw=10ms
Symbol VCBO VCEO VEBO IC ICP
* PC Tj Tstg
Rating -30 -20 -6 -5 -10 0.5 150
-5.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1386-P |
MCC |
PNP Silicon Epitaxial Transistors |
|
| 2 | 2SB1386-Q |
MCC |
PNP Silicon Epitaxial Transistors |
|
| 3 | 2SB1386-R |
MCC |
PNP Silicon Epitaxial Transistors |
|
| 4 | 2SB1386 |
Rohm |
Low Frequency Transistor |
|
| 5 | 2SB1386 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 6 | 2SB1386 |
GME |
PNP Silicon Epitaxial Planar Transistor |
|
| 7 | 2SB1386 |
Power Silicon |
PNP GENERAL PURPOSE TRANSISTORS |
|
| 8 | 2SB1386 |
JCET |
PNP Transistor |
|
| 9 | 2SB1386 |
HOTTECH |
PNP Transistor |
|
| 10 | 2SB1386 |
Weitron Technology |
Epitaxial Planar Transistor |
|
| 11 | 2SB1386 |
UTC |
LOW FREQUENCY PNP TRANSISTOR |
|
| 12 | 2SB1386 |
WILLAS |
SOT-89 Plastic-Encapsulate Transistors |
|