2SB1346 - INCHANGE

2SB1346 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2027 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

Features

r Breakdown Voltage IC= -5mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -40V ; IE=0 IEBO Emitter Cutoff Current VEB= -4V; IC=0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V hFE-2 DC Current Gain IC= -3A ; VCE= -5V  hFE-1 Classifications Q R S 70-140 100-200 140-280 2SB1346 MIN TYP. MAX UNIT -60 V -60 V -6 V -1.0 V -1.0 V -100 μA .