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SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Transistors IC Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage .
High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -45 -45 -7 -200 -100 150 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Collector-emitter cutoff current Forward current tran.
2SB1218 - TY Semiconductor
Product specification 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolut.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1214 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SB1215 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SB1215 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | 2SB1215 |
Kexin |
Transistors |
|
| 5 | 2SB1215 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SB1216 |
Sanyo Semicon Device |
PNP/NPN Transistor |
|
| 7 | 2SB1216 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SB1216 |
Kexin |
Transistors |
|
| 9 | 2SB1216 |
ON Semiconductor |
Bipolar Transistor |
|
| 10 | 2SB1216 |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 11 | 2SB1217 |
NEC |
PNP SILICON POWER TRANSISTOR |
|
| 12 | 2SB1217 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|