2SB1012 - Hitachi Semiconductor

2SB1012 Silicon PNP Epitaxial Transistor

2SB1012(K) Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K) Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base ID 5 kΩ (Typ) 1 kΩ (Typ) 1 1 2 3 2SB1012(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Coll.

Features

1.5 A, IB =
  –1.5 mA
*1 I C =
  –1 A, IB =
  –1 mA
*1 I C =
  –1.5 A, IB =
  –1.5 mA
*1 I D = 1.5 A
*1 I C =
  –1 A, IB1 =
  –IB2 =
  –1 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1012(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W)
  –3
  –1.0
  –0.3 DC (T C Area .