2SAR514R - Rohm

2SAR514R Midium Power Transistors

Midium Power Transistors (-80V / -0.7A) 2SAR514R  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2) High speed switching  Structure PNP Silicon epitaxial planar transistor  Applications Driver  Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MD  Pack.

Features

1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2) High speed switching
 Structure PNP Silicon epitaxial planar transistor
 Applications Driver
 Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MD
 Packaging specifications Package Type Code TSMT3 TL Basic ordering unit (pieces) 3000
 Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of st.