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The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature Junction Temperature Maximum Power Dissipations (TA = 25°C) Total Power Dissipation −55 to +150°C +150°C Maximum 250 mW Maximum Voltages an.
• High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA)
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature Junction Temperature Maximum Power Dissipations (TA = 25°C) Total Power Dissipation
−55 to +150°C +150°C Maximum
250 mW
Maximum Voltages and Currents (TA = 25°C)
VCBO
Collector to Base Voltage
VCEO
Collector to Emitter Voltage
VEBO
Emitter to Base Voltage
IC Collector Current
IB Base Current
Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%
−60 V −50 V −5.0 V −100 mA −20 mA
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTIC DC Current Gai.
2SA733 - GME
Production specification Silicon Epitaxial Planar Transistor FEATURES Excellent hFE Linearity. Power dissipation：P.
2SA733 - BLUE ROCKET ELECTRONICS
TO-92 PNP 。Silicon PNP transistor in a TO-92 Plastic Package. / Features hFE 、。 High hFE and excellent hFE linea.
2SA733 - MCC
2SA733 Features • Halogen Free Available Upon Request By Adding Suffix "-HF" • Moisture Sensitivity Level 1 • Epoxy Mee.
2SA733 - DC COMPONENTS
Designed for use in driver stage of AF amplifier applicatioms. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Max.
2SA733 - SEMTECH
ST 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivi.
2SA733 - Fairchild Semiconductor
2SA733 — PNP General Purpose Amplifier 2SA733 PNP General Purpose Amplifier Features • This device is designed for gene.
2SA733 - Unisonic Technologies
The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage: BVCEO=-50V * Collector current up .
2SA733 - Kexin
SMD Type Features Collector-Base Voltage: VCBO=-60V TTrraannssiissttoorrss PNP Transistors 2SA733 SOT-23 2.9 +0.1 -0.
2SA733 - SeCoS
Elektronische Bauelemente 2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor FEATURES Complementary of the 2SC94.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA730 |
ETC |
SI PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 2 | 2SA731 |
ETC |
SI PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 3 | 2SA733-K |
MCC |
PNP Transistor |
|
| 4 | 2SA733-P |
MCC |
PNP Transistor |
|
| 5 | 2SA733-Q |
MCC |
PNP Transistor |
|
| 6 | 2SA733-R |
MCC |
PNP Transistor |
|
| 7 | 2SA733M |
LZG |
SILICON PNP TRANSISTOR |
|
| 8 | 2SA733M |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 9 | 2SA733T |
SeCoS Elektronische Bauelemente |
PNP Transistor |
|
| 10 | 2SA738 |
SavantIC |
Silicon POwer Transistors |
|
| 11 | 2SA738 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 12 | 2SA739 |
Toshiba |
SILICON PNP TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
|