·With TO-3 package ·Wide area of safe operation ·Complement to type 2SC793 APPLICATIONS ·For radio frequency,audio frequency and power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base vo.
mitter breakdown voltage IC=-25mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V -100 V Collector-base breakdown voltage -100 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -2.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 200 Transition frequency 6 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA663 .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.3V(Ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA661 |
ETC |
SILICON PNP EPITAXIAL TRANSISTOR | |
2 | 2SA666 |
Micro Electronics |
(2SAxxxx) TRANSISTOR | |
3 | 2SA603 |
ETC |
PNP SILICON EPITAXIAL TRANSISTOR | |
4 | 2SA606 |
ETC |
PNP/NPN Transistor | |
5 | 2SA606 |
NEC |
Transistor | |
6 | 2SA607 |
ETC |
PNP/NPN Transistor | |
7 | 2SA608 |
JCET |
PNP Transistor | |
8 | 2SA608 |
CHINA BASE |
PNP Transistor | |
9 | 2SA608 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
10 | 2SA608 |
TRANSYS Electronics Limited |
Plastic-Encapsulated Transistors | |
11 | 2SA608 |
Secos |
PNP Plastic Encapsulated Transistor | |
12 | 2SA608-D |
Secos |
PNP Plastic Encapsulated Transistor |