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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Power Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 80 MHz (typ.) 2SA2182 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO − 230 V Collector-emitter voltage VCEO − 230 V Emitter-base volt.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA2180 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 2 | 2SA2181 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 3 | 2SA2183 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | 2SA2184 |
Toshiba |
Silicon PNP Transistor |
|
| 5 | 2SA2186 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA2186 |
ON Semiconductor |
Bipolar Transistor |
|
| 7 | 2SA2101 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 8 | 2SA2102 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 9 | 2SA2112 |
Sanyo Semicon Device |
PNP Transistors |
|
| 10 | 2SA2112 |
ON Semiconductor |
Bipolar Transistor |
|
| 11 | 2SA2113 |
Rohm |
Medium power transistor |
|
| 12 | 2SA2117 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
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