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www.DataSheet4U.com Ordering number : ENN8357 2SA2168 2SA2168 Features • • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of MBIT process. High breakdown voltage and large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to.
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PNP Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Adoption of MBIT process. High breakdown voltage and large current capacity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings --180 --160 --6 --1.5 --2.5 1.5 150 --55 to +150 Unit V V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA2162 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 2 | 2SA2164 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 3 | 2SA2166 |
Isahaya Electronics Corporation |
Silicon PNP Epitaxial Type Transistor |
|
| 4 | 2SA2167 |
Isahaya Electronics Corporation |
Silicon PNP Epitaxial Type Transistor |
|
| 5 | 2SA2169 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA2169 |
ON Semiconductor |
Bipolar Transistor |
|
| 7 | 2SA2169 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | 2SA2101 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 9 | 2SA2102 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 10 | 2SA2112 |
Sanyo Semicon Device |
PNP Transistors |
|
| 11 | 2SA2112 |
ON Semiconductor |
Bipolar Transistor |
|
| 12 | 2SA2113 |
Rohm |
Medium power transistor |
|