·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta.
Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -230V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 2SA2151A MIN TYP. MAX UNIT -230 V -0.5 V -10 μA -10 μA 50 180 450 pF 20 MHz hFE Classifications O P Y 50-100 70-140 90-180 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented .
By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing therma.
▪ Small package (TO-3P) By adapting the Sanken unique wafer-thinner technique, these ▪ High power handling capacity, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA2151 |
Sanken |
Audio Amplification Transistor | |
2 | 2SA2151 |
Allegro MicroSystems |
Audio Amplification Transistor | |
3 | 2SA2151 |
Inchange Semiconductor |
POWER TRANSISTOR | |
4 | 2SA2153 |
Sanyo Electric |
PNP Epitaxial Planar Silicon Transistor | |
5 | 2SA2153 |
ON Semiconductor |
Bipolar Transistor | |
6 | 2SA2154 |
Toshiba |
Silicon PNP Transistor | |
7 | 2SA2154CT |
Toshiba |
Silicon PNP Transistor | |
8 | 2SA2154MFV |
Toshiba |
Silicon PNP Transistor | |
9 | 2SA2101 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
10 | 2SA2102 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor | |
11 | 2SA2112 |
Sanyo Semicon Device |
PNP Transistors | |
12 | 2SA2112 |
ON Semiconductor |
Bipolar Transistor |