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2SA2151A - Inchange Semiconductor

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2SA2151A Silicon PNP Power Transistor

·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta.

Features

Saturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -230V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 2SA2151A MIN TYP. MAX UNIT -230 V -0.5 V -10 μA -10 μA 50 180 450 pF 20 MHz  hFE Classifications O P Y 50-100 70-140 90-180 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented .

The same part from a different manufacturer

Datasheet 2SA2151A - Allegro MicroSystems 2SA2151A

By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing therma.

Datasheet 2SA2151A - Sanken 2SA2151A

▪ Small package (TO-3P) By adapting the Sanken unique wafer-thinner technique, these ▪ High power handling capacity, .

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