2SA1878 - Inchange Semiconductor

2SA1878 Power Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -2.5A ·Large Current Capability-IC= -5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=2.

Features

iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1878 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.05A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A ICBO Collector Cutoff Current VCB= -80V; IE= 0 ICEO Collector Cutoff Current VCE= -80V; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE DC Current Gain IC= -2.5A; VCE= -2V fT Current-Gain—B.