Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 1.6±0.15 Unit: mm s Features q q 0.4 0.8±0.1 0.4 0.2–0.05 0.15–0.05 +0.1 High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.6±.
q q
0.4
0.8±0.1
0.4
0.2
–0.05 0.15
–0.05
+0.1
High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Ratings
–30
–20
–5
–30 125 125
–55 ~ +125
Unit V V V mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
EIAJ:SC
–75 SS
–.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1791 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SA1795 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor | |
3 | 2SA1796 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor | |
4 | 2SA1797 |
Rohm |
Power Transistor | |
5 | 2SA1797 |
SeCoS |
PNP Transistor | |
6 | 2SA1797 |
WILLAS |
Plastic-Encapsulate Transistors | |
7 | 2SA1797 |
Kexin |
Power Transistor | |
8 | 2SA1797 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
9 | 2SA1797 |
JCET |
PNP Transistor | |
10 | 2SA1797 |
HOTTECH |
PNP Transistor | |
11 | 2SA1797 |
UTC |
POWER TRANSISTOR | |
12 | 2SA1797 |
GME |
PNP Transistor |