2SA1774 - Motorola Inc

2SA1774 PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2SA1774/D PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Reduces Board.

Features

°C 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector
  –Base Breakdown Voltage (IC =
  –50 µAdc, IE = 0) Collector
  –Emitter Breakdown Voltage (IC =
  –1.0 mAdc, IB = 0) Emitter
  –Base Breakdown Voltage (IE =
  –50 µAdc, IE = 0) Collector
  –Base Cutoff Current (VCB =
  –30 Vdc, IE = 0) Emitter
  –Base Cutoff Current (VEB =
  –5.0 Vdc, IB = 0) Collector
  –Emitter Saturation Voltage(2) (IC =
  –50 mAdc, IB =
  –5.0 mAdc) DC Current Gain(2) (VCE =
  –6.0 Vdc, IC =
  –1.0 mAdc) Transition Frequency (VCE =
  –12 Vdc, IC =
  –2.0 mAdc, f = 30 MHz) Output Capacitance (VCB =
  –12 Vdc, IE = 0 Adc, f = 1 MHz.