2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO –80 V VCEO –80 V VEBO –6 V IC –6 A IB –3 A PC 30(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions R.
1.35±0.15
2.54
0.85
+0.2 -0.1
2.54
0.45
+0.2 -0.1
2.4±0.2
2.2±0.2
Weight : Approx 2.0g
BCE
a. Part No. b. Lot No.
Collector Current IC(A)
I C
– V CE Characteristics (Typical)
–6
–200mA
–150mA
–100mA
–5
–80mA
–4
–50mA
–3
–30mA
–20mA
–2
IB=
–10mA
–1
0
0
–1
–2
–3
–4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t )
– I B Characteristics (Typical)
–3
I C
– V BE Temperature Characteristics (Typical)
(VCE=
–4V)
–6
Collector Current IC(A) 251˚2C5˚(CC(asCaesTeeTmep)mp)
–30˚C (Case Temp)
–2
–4
–1
–2A
–4A
IC=
–6A
0
0
–0..
·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collect.
·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4511 ·Min.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1721 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
2 | 2SA1723 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors | |
3 | 2SA1724 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor | |
4 | 2SA1726 |
Sanken electric |
Silicon PNP Transistor | |
5 | 2SA1726 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SA1726 |
Inchange Semiconductor |
POWER TRANSISTOR | |
7 | 2SA1727 |
Rohm |
High-voltage Switching Transistor | |
8 | 2SA1728 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors | |
9 | 2SA1729 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors | |
10 | 2SA1700 |
INCHANGE |
PNP Transistor | |
11 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor | |
12 | 2SA1700 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |