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Ordering number:ENN3094 www.DataSheet4U.com PNP/NPN Epitaxial Planar Silicon Transistors 2SA1708/2SC4488 High-Voltage Switching Applications Features · Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 .
· Adoption of FBET, MBIT processes.
· High breakdown voltage, large current capacity.
· Fast switching speed.
Package Dimensions
unit:mm 2064A
[2SA1708/2SC4488]
2.5 1.45 6.9 1.0
4.5
1.0
0.6
1.0
0.9 1 2 3
0.5 0.45
( ) : 2SA1708
2.54 2.54
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
1 : Emitter 2 : Collector 3 : Base SANYO : NMP
Ratin.
2SA1708 - ON Semiconductor
Ordering number : EN3094B 2SA1708/2SC4488 Bipolar Transistor (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP Features.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1700 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor |
|
| 3 | 2SA1700 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 4 | 2SA1700 |
LGE |
PNP Transistor |
|
| 5 | 2SA1700 |
GME |
PNP Epitaxial Planar Silicon Transistor |
|
| 6 | 2SA1700 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 7 | 2SA1701 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SA1702 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
| 9 | 2SA1703 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SA1703 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 11 | 2SA1704 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 12 | 2SA1705 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|