Ordering number : EN3093A 2SA1707/2SC4487 Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP http://onsemi.com Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity, wide ASO • Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbo.
• Adoption of FBET, MBIT processes
• Low collector-to-emitter saturation voltage
• Large current capacity, wide ASO
• Fast switching speed
( )2SA1707
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature
VCBO VCEO VEBO IC ICP PC Tj
Storage Temperature
Tstg
Conditions
Ratings (--)60 (--)50 (--)6 (--)3 (--)6 1 150
--55 to +150
Unit V V V A A W °C °C
Stresses exceeding Maximum Ratings may damage the device. .
Ordering number:EN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SA1700 |
INCHANGE |
PNP Transistor | |
2 | 2SA1700 |
Sanyo Semicon Device |
PNP Epitaxial Silicon Transistor | |
3 | 2SA1700 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | 2SA1700 |
LGE |
PNP Transistor | |
5 | 2SA1700 |
GME |
PNP Epitaxial Planar Silicon Transistor | |
6 | 2SA1700 |
UTC |
PNP EPITAXIAL SILICON TRANSISTOR | |
7 | 2SA1701 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
8 | 2SA1702 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors | |
9 | 2SA1703 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
10 | 2SA1703 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
11 | 2SA1704 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
12 | 2SA1705 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |