2SA1706 Bipolar Transistor Datasheet

2SA1706 Bipolar Transistor

Ordering number : EN3026B 2SA1706 Bipolar Transistor –50V, –2A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • Adoption of FBET, MBIT processes • Large current capacity and wide ASO • Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Colle.

Features

• Adoption of FBET, MBIT processes
• Large current capacity and wide ASO
• Fast switching speed Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature VCBO VCEO VEBO IC ICP PC Tj Storage Temperature Tstg Conditions Ratings --60 --50 --6 --2 --4 1 150 --55 to +150 Unit V V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation abo.

The same part from a different manufacturer

2SA1706 - Sanyo Semicon Device

Ordering number:EN3026 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications.

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2SA1706 - ON Semiconductor