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< SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0.5 Unit：ｍｍ 2SA1235A 2.5 1.5 0.5 Excellent linearity of DC forward gain Small collector to emitter saturation voltage VCE(sat).
ICON PNP EPITAXIAL TYPE(Super mini type) MAXIMUM RATINGS（Ｔａ＝２５℃） Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 2SA1235A -60 -6 -50 200 200 200 +150 -55～+150 450 2SA1602A -60 2SA1993 -50 Unit V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS（Ta=25℃） Parame ter Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ EＢＯ Symbol C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1602 |
Isahaya Electronics |
Silicon PNP Transistor |
|
| 2 | 2SA1600 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 3 | 2SA1600 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1600 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA1601 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor |
|
| 6 | 2SA1601 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SA1601 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 8 | 2SA1603 |
Isahaya Electronics |
Silicon PNP Transistor |
|
| 9 | 2SA1603A |
Isahaya Electronics |
Silicon PNP Transistor |
|
| 10 | 2SA1606 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 11 | 2SA1606 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 12 | 2SA1607 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|