2SA1400Z - INCHANGE

2SA1400Z PNP Transistor

·High Collector-Emitter Voltage - : VCEO= -400V(Min) ·Complement to Type 2SC3588Z ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching ,especially in Hybrid integrated cricuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40.

Features

tor-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 ICBO Collector Cutoff Current VCB= -400V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -100mA; IB= -10mA VBE(sat) Base-Emitter Saturation Voltage IC= -100mA; IB= -10mA hFE DC Current Gain IC= -50mA; VCE= -5V MIN TYP. MAX UNIT -400 V --400 V -7 V -100 μA -10 μA -1.0 V -1.2 V 30 200  hFE Classifications N M L K 30-60 40-80 60-120 100-200 Notice： ISC reserves the rights to make changes of the content herei.