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Ordering number:ENN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimens.
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
· Adoption of FBET process
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC I.
2SA1380 - BLUE ROCKET ELECTRONICS
TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package. / Features ,,。 High breakdown voltage, small r.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SA1381 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SA1381 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 3 | 2SA1382 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 4 | 2SA1383 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SA1383 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 6 | 2SA1384 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR |
|
| 7 | 2SA1384 |
Kexin |
PNP Transistors |
|
| 8 | 2SA1384 |
TY Semiconductor |
Transistor |
|
| 9 | 2SA1385 |
NEC |
PNP Silicon Transistor |
|
| 10 | 2SA1385-Z |
NEC |
PNP Silicon Transistor |
|
| 11 | 2SA1385-Z |
Kexin |
PNP Transistor |
|
| 12 | 2SA1385-Z |
Renesas |
SILICON POWER TRANSISTOR |
|